The effect of the exalite dopant on photoluminescence of poly[methylphenylsilane] in thin films

Abstract

Polysilanes are known as representatives of sigma-conjugated polymers which exhibit unique characteristic properties such as absorption and photoluminescence in UV region with a small Stokes's shift, which is closely related to their electronic structure and exciton formation on the main silicon chain. This group of materials is considered for optoelectronic applications, for instance in nanolithography, in OLED devices or in photovoltaic as an active layer. In this work, we used poly(methylphenylsilane) as a p-type semiconductive material and Exalite 351 as an electron acceptor in the structure of host-dopant system for active layer in electronic devices in order to investigate the influence of dopant on photoluminescence of PMPSi. Polymer and polymer/dopant thin films were deposited on silicon substrate, with thickness in range of hundreds nanometers. The properties of thin films were characterized by UV/VIS absorption spectrometry and by fluorimetry.