Plazmatická polymerizace fenylmethylsilanu

Abstract

CVD depozice poly(methylphenylsilanu) v dohasínajícím plazmatu MW ECR a v RF plazmatu jsou zkoumány z hlediska složení plazmatu a vlastností výsledných vrstev. K analýze bylo použito jednak přímo hmotnostního spektrometru a dale byly s pomocí plynové chromatografie zkoumány produkty plazmochemických reakcí ve vymražených vzorcích.

Microwave electron cyclotron resonance plasma afterglow chemical vapour deposition (MW ECR PA CVD) and radio frequency plasma enhanced CVD (RF PE CVD) of plasma-poly(methylphenylsilane) (p-PMPS) were examined according to plasma composition and resulting thin film properties. Direct mass spectrometry monitoring and gas chromatography and mass spectroscopy (GC MS) of cold-trapped plasma products were used. Deposited samples were measured mainly on luminescence. The low pressure MW ECR plasma creates species for layer growth by a smaller average number of inelastic collisions per origin of monomer molecule. The exploitation of monomer reaches 23% in comparison with RF plasma (5-7%) and the deposition rate is larger (1.5 nm s(-1)) in comparison with RF plasma (0.2 nm s(-1)). The inelastic collision rate is primarily more important for growing layers than the power introduced into plasma. The luminescence spectra of both MW and RF samples are compared. (c) 2005 Elsevier B.V All rights reserved.