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Mechanism and suppression of physisorbed-water-caused hysteresis in graphene FET sensors

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dc.title Mechanism and suppression of physisorbed-water-caused hysteresis in graphene FET sensors en
dc.contributor.author Bartošík, Miroslav
dc.contributor.author Mach, Jindřich
dc.contributor.author Piastek, Jakub
dc.contributor.author Nezval, David
dc.contributor.author Konečný, Martin
dc.contributor.author Švarc, Vojtěch
dc.contributor.author Ensslin, Klaus
dc.contributor.author Šikola, Tomáš
dc.relation.ispartof ACS sensors
dc.identifier.issn 2379-3694 Scopus Sources, Sherpa/RoMEO, JCR
dc.date.issued 2020
utb.relation.volume 5
utb.relation.issue 9
dc.citation.spage 2940
dc.citation.epage 2949
dc.type article
dc.language.iso en
dc.publisher NLM (Medline)
dc.identifier.doi 10.1021/acssensors.0c01441
dc.relation.uri https://pubs.acs.org/doi/10.1021/acssensors.0c01441
dc.subject graphene en
dc.subject sensor en
dc.subject relative humidity en
dc.subject water en
dc.subject hysteresis en
dc.subject gate voltage en
dc.subject physisorption en
dc.description.abstract Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages. en
utb.faculty Faculty of Technology
dc.identifier.uri http://hdl.handle.net/10563/1009940
utb.identifier.obdid 43881654
utb.identifier.scopus 2-s2.0-85091691765
utb.identifier.wok 000573560800029
utb.identifier.pubmed 32872770
utb.source j-scopus
dc.date.accessioned 2020-10-05T13:46:34Z
dc.date.available 2020-10-05T13:46:34Z
dc.description.sponsorship Grant Agency of the Czech RepublicGrant Agency of the Czech Republic [17-21413S]; H2020 Twinning Programme (Project SINNCE) [810626]; MEYS CR [LQ1601 CEITEC 2020, LM2015041]
utb.ou Department of Physics and Materials Engineering
utb.contributor.internalauthor Bartošík, Miroslav
utb.fulltext.affiliation Miroslav Bartošík *, Jindřich Mach, Jakub Piastek, David Nezval, Martin Konečný, Vojtěch Švarc, Klaus Ensslin, Tomáś̌ Šikola Corresponding Author Central European Institute of Technology - Brno University of Technology (CEITEC BUT), 612 00 Brno, Czech Republic; Institute of Physical Engineering, Brno University of Technology, 616 69 Brno, Czech Republic; Department of Physics and Materials Engineering, Faculty of Technology, Tomas Bata University in Zlín, 760 01, Czech Republic; orcid.org/0000-0003-4706-9112; Email: [email protected] Central European Institute of Technology - Brno University of Technology (CEITEC BUT), 612 00 Brno, Czech Republic; Institute of Physical Engineering, Brno University of Technology, 616 69 Brno, Czech Republic; orcid.org/0000-0003-1896-0715 Central European Institute of Technology - Brno University of Technology (CEITEC BUT), 612 00 Brno, Czech Republic; Institute of Physical Engineering, Brno University of Technology, 616 69 Brno, Czech Republic Institute of Physical Engineering, Brno University of Technology, 616 69 Brno, Czech Republic Institute of Physical Engineering, Brno University of Technology, 616 69 Brno, Czech Republic Central European Institute of Technology - Brno University of Technology (CEITEC BUT), 612 00 Brno, Czech Republic; Institute of Physical Engineering, Brno University of Technology, 616 69 Brno, Czech Republic Solid State Physics Laboratory, ETH Zürich, CH 8093 Zürich, Switzerland Central European Institute of Technology - Brno University of Technology (CEITEC BUT), 612 00 Brno, Czech Republic; Institute of Physical Engineering, Brno University of Technology, 616 69 Brno, Czech Republic
utb.fulltext.dates Received: July 13, 2020 Accepted: September 2, 2020 Published: September 2, 2020
utb.fulltext.sponsorship The authors acknowledge the support by the Grant Agency of the Czech Republic (Grant No. 17-21413S), the H2020 Twinning Programme (Project SINNCE, 810626), and MEYS CR (Project No. LQ1601CEITEC 2020). We also acknowledge the CEITEC Nano Research Infrastructure supported by MEYS CR within the Project LM2015041 for providing us with access to their facilities and Miroslav Kolib́ al for reading this manuscript.
utb.wos.affiliation [Bartosik, Miroslav; Mach, Jindrich; Piastek, Jakub; Svarc, Vojtech; Sikola, Tomas] Brno Univ Technol CEIT, Cent European Inst Technol, Brno 61200, Czech Republic; [Bartosik, Miroslav; Mach, Jindrich; Piastek, Jakub; Nezval, David; Konecny, Martin; Svarc, Vojtech; Sikola, Tomas] Brno Univ Technol, Inst Phys Engn, Brno 61669, Czech Republic; [Ensslin, Klaus] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland; [Bartosik, Miroslav] Tomas Bata Univ Zlin, Dept Phys & Mat Engn, Fac Technol, Zlin 76001, Czech Republic
utb.scopus.affiliation Central European Institute of Technology - Brno University of Technology (CEITEC BUT), Purkyňova 123, Brno, 612 00, Czech Republic; Institute of Physical Engineering, Brno University of Technology, Technická 2, Brno, 616 69, Czech Republic; Department of Physics and Materials Engineering, Faculty of Technology, Tomas Bata University in Zlín ,Vavrečkova 275760 01 Zlín, Czech Republic; Solid State Physics Laboratory, ETH ZürichCH 8093 Zürich, Switzerland
utb.fulltext.projects 17-21413S
utb.fulltext.projects 810626
utb.fulltext.projects LQ1601-CEITEC 202
utb.fulltext.projects LM2015041
utb.fulltext.faculty Faculty of Technology
utb.fulltext.ou Department of Physics and Materials Engineering
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